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Piezoelectric effect12/14/2023 ![]() ![]() In recent years, many experimental works have used one-dimensional (1D) piezoelectric nanomaterials as the building blocks of piezo-phototronic devices for light emission or as nanogenerators 8, 9, 10. Strain engineering is a powerful strategy for significantly enhancing the performance of electronic and photonic devices 1, 2, 3, 4, 5, 6, 7. ![]() Our results provide evidence for strain-gating monolayer MoS 2 piezotronics, a promising avenue for achieving augmented functionalities in next-generation electronic and mechanical–electronic nanodevices. In addition, a new type of MoS 2 strain/force sensor built using a monolayer MoS 2 triangle is also demonstrated. The underlying mechanism of strain-induced in-plane charge polarization is proposed and discussed using energy band diagrams. These polarization charges alter the Schottky barrier height on both contacts, resulting in a barrier height increase with increasing compressive strain and decrease with increasing tensile strain. The experimental observation indicates that the conductivity of MoS 2 devices can be actively modulated by the piezoelectric charge polarization-induced built-in electric field under strain variation. Here we report the experimental study of the theoretically predicted piezoelectric effect in triangle monolayer MoS 2 devices under isotropic mechanical deformation. High-performance piezoelectricity in monolayer semiconducting transition metal dichalcogenides is highly desirable for the development of nanosensors, piezotronics and photo-piezotransistors. ![]()
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